The project deals with description of electronic transport properties of prototypical semiconducting monolayers realized on transition metal dichalcogenides to guide and interpret forthcoming realizations of atomic-thick field effect transistors and superconducting junctions. We combine state-of-the-art numerical approach in quantum transport modeling together with recently developed realistic tight-binding approach to tackle down and predict properties of realistic normal and superconducting TMDCs. Specifically we focus on the effects of edges, disorder, spin-valley mixing on the electronic transport properties of gated TMDCs nanoribbons and Josephson junctions.